memristive crossbar arrays

Wafer-Scale Fabrication of 2D Materials based Memristive Crossbar Arrays with Record Electrical Performance

Prof. Mario Lanza, Nanoelectronics, Soochow University

Nov 11, 15:45 - 17:00

B2 L5 R5209

material fabrication memristive crossbar arrays

In this seminar, I will present the first wafer-scale statistical analysis of memristive crossbar arrays made of 2D layered materials. By using chemical vapor deposited multilayer hexagonal boron nitride (h-BN) sheets, we have fabricated metal/h-BN/metal memristive crossbar arrays that exhibit high yield ~98%, and low device-to-device variability. The devices showed record electrical performance, including stable operation at ultra-low currents down to 110 fA in low resistive state, ON/OFF current ratios up to 1011, record non-linearity of