QD laser

Monolithic integration with QD active medium

Sat, Jul 1 2017 - Wed, Oct 1 2025

QD laser monolithic integration

Direct epitaxial integration of III-V optoelectronic devices on Si offers a substantial manufacturing cost and scalability advantage over heterogeneous integration via wafer bonding.

Heterogeneously Integration

Fri, Jun 1 2018 - Wed, Oct 1 2025

QD laser heterogenouse integration

Heterogeneous integration bonds unpatterned III-V thin films to silicon wafers at the early- to mid-stages with a coarse alignment, and then define devices lithographically on the full wafer scale.